The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness ...

Seyfarth Synopsis: In a recent decision, the U.S. Court of Appeals for the Fifth Circuit held that a factfinder could conclude that an employer’s six-month delay during the ADA interactive ...

Eventually, we realize operational logic-in-memory circuits by integrating our WSe 2 devices on a printed circuit board, demonstrating reliable half adder and parity-checker circuit operations under ...

Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile ...

A new technical paper titled “Accelerating OTA Circuit Design: Transistor Sizing Based on a Transformer Model and Precomputed Lookup Tables” was published by University Minnesota and Cadence. Abstract ...

Researchers at the US Department of Energy’s (DOE’s) Oak Ridge National Laboratory (ORNL) have been testing a hardy new type of transistor that can withstand the intense radiation inside a reactor.

Fin field effect transistors (FinFETs) are predicted to be supplant planar CMOS field effect transistors (FETs) in the upcoming generation because of their exceptional electrical characteristics. This ...