According to the kinetics at the bioreactor level, it was observed that D2 has the appropriate conditions for greater production of ellagic acid and yield compared to the requirements of D1 and in ...

An 8 Gb multi-level NAND flash memory is fabricated in a 63 nm CMOS technology with shallow trench isolation. The cell and chip sizes are 0.02 /spl mu/m/sup 2/ and 133 mm/sup 2/, respectively.