News

C&EN12d
Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling - ACS Publications
Oxide thin-film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, oxide semiconductors (OSs) have been developed ...
IEEE15d
Sub-1-K Operation of SiGe Transistors and Circuits
We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of ...
IEEE17d
Enabling Selective and Tunable Weight Updates in All-InGaZnO 3-Transistor 1-Capacitor Synaptic Circuits for On-Chip Training - IEEE Xplore
This approach is experimentally validated through an all-InGaZnO (IGZO) thin-film transistor (TFT) 3-transistor 1-capacitor (3T1C) synaptic circuit. IGZO TFTs are specifically chosen for their ability ...