Tunnel FETs can be endorsed as a potential successor of bulk Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology owing to Complementary-Metal-Oxide-Semiconductor (CMOS) compatible ...

Time-resolved charge-collection measurements performed on AlSb/InAs/GaSb resonant interband tunneling diodes (RITDs) with pulsed laser excitation exhibit complex behavior as a function of the device ...

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