In this work we propose an analytical model for the gate current 1/f noise in CMOS devices. The model is based on a simple idea: one electron trapped in the dielectric switches-off the tunneling ...

This paper demonstrated CMOS characteristics on a Si(110) surface by using a surface flattening process and radical oxidation. By forming a MOS device on a Si(110) surface, a high-speed and low 1/f ...

A multinational team has cracked a long-standing barrier to reliable quantum computing by inventing an algorithm that lets ordinary computers faithfully mimic a fault-tolerant quantum circuit built on ...