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In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...
David Uram, a principal and co-founder of PIRHL, said that a “lease purchase structure” is currently being designed that would allow for residents living in one of the 52 units qualifying for ...
Abstract: We propose a novel 3D Charge Coupled Device (CCD) for high density block addressable buffer memory with IGZO channel and integrable in 3D NAND Flash string architecture. To this purpose, we ...
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