Abstract: We propose a novel 3D Charge Coupled Device (CCD) for high density block addressable buffer memory with IGZO channel and integrable in 3D NAND Flash string architecture. To this purpose, we ...

An electrostatic discharge (ESD) protection circuit with silicon-controlled-rectifier (SCR) device has been designed without latch-up risk. After fabrication in a 0.13-μm CMOS process, the ESD ...