We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature. As expected, the ...

By way of examples, the article highlights the fact that the combination of high-bandwidth, high-gain and low-noise SiGe HBTs with dense CMOS functionality in a SiGe BiCMOS technology enables ...