News

In an effort to gain a competitive edge in the cost-sensitive wireless communications arena, STMicroelectronics has added silicon-germanium (SiGe) biCMOS to its arsenal of process technologies ...
The continued advancements in SiGe BiCMOS process development and sophisticated device architectures enable high-performance analog and mixed- signal circuit designs at ever-increasing frequencies ...
Over time BiCMOS’ advantages became less pronounced and was eventually abandoned. All in all, this glimpse at the internals of a Pentium processor provides a fascinating snapshot of high-end ...
Motorola said it has demonstrated integrated HBTs in their RF BiCMOS flow, with performance of 45 GHz and 90 GHz for f+ and fmax respectively, at half the current of traditional SiGe transistors. The ...
To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...
Built on top of a standard BiCMOS process flow, the new technology will also be a major step forward for sustainable DCI networking.” About ADVA ...
Analog Devices’ modular BiCMOS process, developed at its Limerick design centre, will be used for industrial and automotive chips . Called iCMOS, for industrial CMOS, “what we have really done is take ...
Plessey Semiconductors has started developing a 0.35 micron silicon germanium (SiGe) BiCMOS process technology on its 8-inch line at Roborough.
0.35 micron silicon germanium (SiGe) BiCMOS British chipmaker Plessey Semiconductors today announced it has commenced the development of a 0.35 micron silicon germanium (SiGe) BiCMOS process ...
Plessey Semiconductors has started developing a 0.35micron silicon germanium (SiGe) BiCMOS process technology on its 8in line at its Plymouth based semiconductor manufacturing facility.
Plessey Semiconductors has started developing a 0.35micron silicon germanium (SiGe) BiCMOS process technology on its 8in line at its Plymouth based semiconductor manufacturing facility.