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AlphaGalileo2d
Non-contact and nanometer-scale measurement of shallow PN junction depth buried in Si wafers
An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si ...
AZoOptics on MSN22h
New Non-Destructive Method Measures PN Junction Depth in Si Wafer
This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...
Yahoo5d
Vendor applications open for Chalk the Block, Día de los Muertos - Yahoo
EL PASO, Texas (KTSM) — The City of El Paso Museum and Cultural Affairs Department (MCAD) is accepting vendor applications for Chalk the Block and Día de los Muertos events, according to the ...
IEEE4d
Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers - IEEE Xplore
Using epitaxial multiple p-n junction structures of 4H-SiC, lateral super junction diodes were fabricated for the first time. The breakdown voltage of the device was 400 V, which is more than 3/spl ...
AZoOptics on MSN2d
EU Project ELENA Pioneers LNOI Platform for Next-Gen Photonic Circuits & Europe’s 1st Commercial Supplier of LNOI Wafers
A recently concluded 42-month EU project, ELENA, announced today the development of the first-ever, European-made lithium ...
IEEE6d
Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth - IEEE Xplore
Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage ...