As the demand for data-intensive computing grows, so too does the need for next-generation memory technologies capable of ...

Imec is a world-leading research and innovation center in nanoelectronics and digital technologies. Imec has more than 6.000 ...

Field-effect transistors (FETs), when functionalized with proper biorecognition elements (such as antibodies or enzymes), represent a unique platform for real-time, specific, label-free transduction ...

14 A is equivalent to 1.4 nm and IMEC expects it will be succeed by 10 A or 1 nm in 2029. IMEC sees that progression carrying ...

A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...

One of the materials that has garnered a lot of attention as a possible qubit platform is hexagonal boron nitride (h-BN), a ...

The field effect mobility in an oxide thin film transistor (TFT) is studied theoretically. Based on a multiple-trapping and release model, a unified expression for field effect mobility is formulated ...

Reconfigurable Field Effect Transistors (RFETs) are, typically, multi-gated Schottky barrier (SB) FETs providing both unipolar n-type and p-type conduction mechanisms and polarity switching ...

Scientists uncover magnetic-field control of ultrafast spin dynamics in 2D ferromagnets. ... Magnetic control acceleration effect of ultrafast demagnetization in 2D magnet FGT.

Discover how Penn State’s 2D CMOS computer breakthrough paves the way for ultra-efficient, atomic-scale electronics beyond silicon.

This article is cited by 25 publications. Xiaowu Tang, Yohan Jo, Hyeok-jin Kwon, Kaibin Wu, Zhijun Li, Seonghyeon Kim, Chan Eon Park, Tae Kyu An, Jihoon Lee, Se Hyun Kim.

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first ...