In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first ...

A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...

Imec is a world-leading research and innovation center in nanoelectronics and digital technologies. Imec has more than 6.000 ...

Instead, they used two different 2D materials to develop both types of transistors ... in electronics for decades by enabling continuous miniaturization of field-effect transistors (FETs)," said ...

14 A is equivalent to 1.4 nm and IMEC expects it will be succeed by 10 A or 1 nm in 2029. IMEC sees that progression carrying ...

Discover how Penn State’s 2D CMOS computer breakthrough paves the way for ultra-efficient, atomic-scale electronics beyond silicon.

2D Model,2D Results,2D Simulations,3D Method,3D Reconstruction,3D Simulation,Accuracy Of Model,Bipolar Transistor,Carrier Concentration,Carrier Mobility,Charge ...

Heterostructures made from 2D materials have led to the discovery of many new electronic phases and have the potential for electronic devices with better performance. However, the mechanism by which ...

Fix point defects in semiconductors to enable smaller, faster chips with better yield—using MoS₂ at industry-safe ...