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More information: Mayukh Das et al, High-performance p-type field-effect transistors using substitutional doping and ...
Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...
RIKEN researchers have used a transistor device to squeeze potassium ions between the layers of a 2D material, helping to transform it from a semiconductor to a metal, a superconductor, ... They built ...
Graphene field effect transistor (GFET)-based biosensors have gained significant interest due to their superior stability and higher electron mobility. ... It is a two-dimensional (2D) carbon material ...
Unlike previous leading transistor designs like the fin field-effect transistor (FinFET), a GAAFET transistor wraps sources with a gate on all four sides, instead of just three.
The bottom-contact transistor has been made by dropping a flake (~29nm thick) of α-In 2 Se 3 onto contacts rather than growing the material from the bottom-up. “When fabricating bottom-contact ...
During the keynote speech at the IEEE International Electron Devices Meeting (IEDM) held at the end of 2024, 2D Field Effect Transistors (2D FET) and carbon nanotubes were mentioned as potential ...
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In this regard, the UCSB team’s study reveals that the enhanced electrostatics of 3D gate-all-around (GAA) structured transistors, when implemented with 2D semiconductors, ... Three-dimensional ...
Researchers at Tokyo Tech have made a lateral ferroelectric memory transistor using a 2D material. They picked α-In 2 Se 3, which is “renowned for high carrier mobility, tunable bandgap and strong ...
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