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Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

New high-voltage Schottky diodes combine ultra-low profile, fast switching, and enhanced insulation for compact, ...

Low-loss reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with the builtin Schottky barrier diode (SBD) has been systematically studied. This device features the MOS-gate ...

Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm MALVERN, Pa., July 09, ...

The D-band (110 - 170 GHz) waveguide-based zero-bias Schottky diode (ZBD) power detector is reported. The design aims to get high responsivity across the band. The circuit is fabricated on a 50 μm ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Terahertz radiation (THz), electromagnetic radiation with frequencies ranging between 0.1 and 10 THz, could be leveraged to ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

"No act of kindness, no matter how small, is ever wasted." We’re proud to share: As the rainy season swept through China, SLKOR teams took to the streets of Shenzhen’s Huaqiangbei yesterday. We ...