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Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

New high-voltage Schottky diodes combine ultra-low profile, fast switching, and enhanced insulation for compact, ...

Low-loss reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with the builtin Schottky barrier diode (SBD) has been systematically studied. This device features the MOS-gate ...

Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm MALVERN, Pa., July 09, ...

The D-band (110 - 170 GHz) waveguide-based zero-bias Schottky diode (ZBD) power detector is reported. The design aims to get high responsivity across the band. The circuit is fabricated on a 50 μm ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...