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Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.
New high-voltage Schottky diodes combine ultra-low profile, fast switching, and enhanced insulation for compact, ...
Low-loss reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with the builtin Schottky barrier diode (SBD) has been systematically studied. This device features the MOS-gate ...
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