In this paper, we present a compact model for surface potential and drain current in transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The model considers 2-D ...

Once thought unlikely, this new finding in coordination chemistry could lead to promising advances in catalysis and materials ...

The mechanical strength and toughness of engineering materials are often mutually exclusive, posing challenges for material ...

Researchers discovered that twisting 2D materials improves toughness while preserving strength, paving the way for durable ...

The continued scaling of silicon transistors faces major challenges due to leakage current increase and on/off ratio degradation from short-channel ...

The research team led by Professor Jun He from Wuhan University has developed a universal metal-assisted epitaxy strategy to produce wafer-scale monolayer MoS2 films with specific substitutional ...

Researchers show that twisting stacked atomic layers can unlock new quantum properties, offering a fresh strategy to engineer ...

An international team, led by Donostia International Physics Center (DIPC), has discovered a new way to design novel quantum ...

As we celebrate the International Year of Quantum 2025, the frontier of light-matter interaction is undergoing a revolution. These advances are poised to transform technology, from medical imaging to ...

Transition metal dichalcogenides (TMDs) have emerged as a prominent class of two-dimensional (2D) materials, offering a tunable bandgap that addresses the limitations of graphene’s gapless nature.

The direct synthesis of wafer-scale single-crystal transition metal dichalcogenides (TMDs) remains challenging, albeit with enormous potential applications as semiconductors. In this work, we ...