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IEEE2d
Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates - IEEE Xplore
In this letter, we fabricated Schottky barrier diodes (SBDs) using n-type zinc gallium oxide (n-ZnGa2O4) single-crystal substrates, which were grown from the melt by the vertical gradient freeze (VGF) ...
IEEE3d
Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With ... - IEEE Xplore
In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ...
C&EN4d
High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene | ACS Applied Materials & Interfaces - ACS Publications
Two-dimensional (2D) release layers are commonly used to realize flexible nitride films. Here, high-quality, large-area, and transferable nitride films can be precisely controlled grown on ...
C&EN4d
Efficient Deep-Blue Light-Emitting Diodes from Highly Luminescent Eu2+-Doped Alkali Metal Halide Nanocrystals via Lattice Field Modulation | Nano Letters - ACS Publications
Lead-halide perovskite nanocrystals (NCs) are promising for fabricating deep-blue (<460 nm) light-emitting diodes (LEDs), but their development is plagued by low electroluminescent performance and ...