A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple ...

NEW YORK CITY, NEW YORK / ACCESS Newswire / June 14, 2025 / New to The Street (NTTS) and High Performance Battery Technology (HPB) announce the launch of the Future ...

Future of Batteries Summit 2025 to Accelerate US Energy Transition and Solid-State Battery Manufacturing ACCESS Newswire. ... Get unlimited digital access #ReadLocal. Try 1 month for $1.

NEW YORK, NY / ACCESS Newswire / June 11, 2025 / New to The Street (NTTS) and High Performance Battery Technology (HPB) announce the launch of the Future of Batteries (FOB) Summit, an exclusive ...

Hanoi (VNA) – State President Luong Cuong on June 9 told EU representatives his support for the bloc’s cooperation with Vietnam in green and digital transition, sustainable development ...

Objectives This study analyses the cost-effectiveness of annual low-dose CT (LDCT) screening of high-risk cancer populations in Chinese urban areas. Design We used a Markov model to evaluate LDCT ...

K-Ras4B, the most frequently mutated Ras isoform in human tumors, plays a vital part in cell growth, differentiation, and survival. Its tail, the C-terminal hypervariable region (HVR), is involved in ...

Barcelona, Spain, 4 June, 2025 — Barcelona’s historic El Molino, a former cabaret theatre and a cultural landmark for more than 100 years, reopened in October 2024 following renovations and a total ...

Hitachi's restructuring and focus on Digital Transformation and Green Energy position it for growth. Explore why HTHIY stock may see a re-rating.

The unit device consists of four tunnel junctions and operates as a two-way switch for single-electron transport. Any combinational logic can be implemented by connecting identical unit devices into a ...

The cuprous iodide of zinc-blende structure (γ-CuI) is a p-type semiconductor with a wide band gap of 3.1 eV. It is considered promising as the third generation of semiconductors, in applications of ...