A small-signal equivalent circuit is developed for the InGaAs/InAlAs/InP collector-up heterojunction bipolar transistor (HBT). Device S-parameters are measured in the 0.05- GHz to 40-GHz range at ...

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Timing-related defects are major contributors to test escapes and in-field reliability problems for very-deep submicrometer integrated circuits. Small delay variations induced by crosstalk, process ...