Nexperia has announced two 1200V 20A SiC Schottky diodes designed to address the demand for ultra-low power loss rectifiers ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver ...

In hard-switching designs, GaN devices can suffer from higher power losses due to body diode behavior, especially with long controller dead times. CoolGaN G5 transistors address this by integrating a ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice.

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in a 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.

We demonstrate a metal sandwiched Al-doped zinc tin oxide (AZTO) thin-film device to exhibit a characteristic evolution process from Schottky junction diode to resistive-switching random access memory ...

Abstract This study presents the fabrication and characterization of flexible Schottky diodes based on silver (Ag) and polyaniline (PAni) layers, constructed on a recyclable poly (ethylene- co -methyl ...

Vishay Intertechnology, Inc. has introduced 16 new 650 V and 1,200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for ...

The diodes low QC down to 56 nC allows for high-speed switching, while their industry-standard package offers a drop-in replacement for competing solutions. Other features include high temperature ...

Diodes Incorporated ZXGD3103 is a gate driver IC that is redefining rectification by enabling the use of MOSFETs in place of traditional Schottky diodes.