Nexperia has announced two 1200V 20A SiC Schottky diodes designed to address the demand for ultra-low power loss rectifiers ...

The D-band (110 - 170 GHz) waveguide-based zero-bias Schottky diode (ZBD) power detector is reported. The design aims to get high responsivity across the band. The circuit is fabricated on a 50 μm ...

The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of ...

By switching ferroelectric polarization, the Schottky barrier can be modulated in a programmable manner, enabling reversible, nonvolatile, and multilevel rectification states. The device demonstrates ...