Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Elaborating on a Flip ON Flop OFF circuit with a circuit that allows for a multi-state 10-position switch or a DAC.

Abstract: An ion-implanted, shallow n + layer has been used for lowering the barrier height of PtSi-n-Si Schottky diodes. Barrier height reductions up to 200 mV have been achieved with little ...