Schottky diodes are typically hard to mentally set apart from the standard when described by a data sheet. Zener diodes can be downright baffling for beginners, especially when mistakenly thrown ...

In hard-switching designs, GaN devices can suffer from higher power losses due to body diode behavior, especially with long controller dead times. CoolGaN G5 transistors address this by integrating a ...

The total Global Power Schottky Diode Market is estimated to reach USD Billion by the year 2028 and the Market is projected to grow exhibiting a Compound Annual Growth Rate (CAGR) of 5.2%, states ...

Low RDS(ON) Power MOSFET and Schottky Diode Nov. 1, 2009 USING TRENCHFET Gen III silicon, the Si4628DY SkyFET from Vishay Intertechnology offers a maximum RDS(ON) of 3 m at a 10-V gate drive and 3 ...

For the development of future magnetic data storage technologies, the ultrafast generation of local magnetic fields is essential. Subnanosecond excitation of the magnetic state has so far been ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Achieves approximately 1.3 times the creepage distance compared to standard products ROHM's New Surface Mount SiC Schottky Barrier Diodes Extends creepage distance to a minimum of 5.1mm ...