In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This ...

This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...

Reference K. Kanegae et al. Appl. Phys. Express 18 041001 (2025) Pictured above: Forward current-voltage characteristics of the vertical rutile GeO2Schottky barrier diode, showing clear rectification ...

Schottky diodes are one type of fundamental component in modern electronics and optoelectronics. As emerging novel channel materials, two-dimensional (2D) semiconductors, especially transition-metal ...

Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...

The curve of the diode 1N5817 It is well known that the schottky and germanium diodes have forward voltage drop significantly lower than silicon diodes. The 1N5817 schottky diode was chosen after ...