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IEEE4d
On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines - IEEE Xplore
In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This ...
IEEE18h
An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes - IEEE Xplore
This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...
C&EN3d
Approaching Ideal Schottky Rectification Characteristics in MoS2 Schottky Diodes
Schottky diodes are one type of fundamental component in modern electronics and optoelectronics. As emerging novel channel materials, two-dimensional (2D) semiconductors, especially transition-metal ...