This letter presents a nonlinear model for carbon nanotube (CNT) Schottky diodes, integrating dc, small-signal, and large-signal parameters. A broadband equivalent model, spanning dc to 110 GHz, is ...

Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction ...