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A small-signal equivalent circuit is developed for the InGaAs/InAlAs/InP collector-up heterojunction bipolar transistor (HBT). Device S-parameters are measured in the 0.05- GHz to 40-GHz range at ...
Intermodulation in bipolar-transistor double-balanced mixers at high frequencies is analyzed theoretically and by computer simulation. The dependence of the distortion on a relatively few normalized ...
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