Gen 4 MOSFETs provide a versatile foundation for various application-optimized bare die, module, and discrete products.

• The stray inductance of the Gen2 inverter brick system can be reduced to 8nH, a 75% decrease compared to Gen1; under the same voltage critical peak, switching losses are reduced by 70%, ...

Can upgrades in power-module design help EV makers improve efficiency, reliability, and cost all at once... Power This Week in PowerBites: Lordstown’s Electric Pickup ...

NEW YORK, NY, UNITED STATES, June 25, 2025 /EINPresswire.com/ -- Market Overview : The Silicon Carbide (SiC) Semiconductor ...

Microchip Technology has added the dsPIC33AK512MPS512 and dsPIC33AK512MC510 Digital Signal Controller (DSC) families to its ...

The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter ...

Imec has announced a significant breakthrough in mobile RF transistor performance with a GaN-on-silicon enhancement-mode ...

As AI continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A leader in power semiconductor technology, ROHM is among the key ...

ROHM's 4th generation silicon carbide (SiC) metal-oxide-semiconductor field-effect Transistor (MOSFET) bare chip has been ...

Toyota is using a power module equipped with Rohm's 4th generation SiC MOSFET bare chip in the traction inverter of its new ...

Fraunhofer ISIT’s Power Electronics division (which develops prototypes for power electronic and sensor systems) will use ...

Ensuring trusted execution across multiple chiplets and vendors is more complex than in traditional monolithic SoCs.