We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the ...

The model’s applicability is confirmed across ten different temperature datasets. Consequently, the proposed GlobalTempNet, coupled with the EGNT process, emerges as a robust, reliable, and ...