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The data stored in a static random access memory (SRAM) immediately after power-up is of practical interest for some applications, such as SRAM physical unclonable functions. In this paper, ...

Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams.

More information: Zhaoyou Wang et al, Quantum Random Access Memory with Transmon-Controlled Phonon Routing, Physical Review Letters (2025). DOI: 10.1103/PhysRevLett.134.210601.

Resistance switching (RS) devices that are based on titanium dioxide (TiO2) nanomaterials have recently attracted substantial research interest because of their simple preparation technology and ...