Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...

Falcomm is proudly U.S.-based, and all products are fully designed and manufactured domestically, including products ...

About Elite RF Elite RF is a U.S.-based RF amplifier manufacturer specializing in solid-state solutions from 1 MHz to 40 GHz ...

Elite RF, a U.S.-based designer and manufacturer of high-performance radio frequency (RF) and microwave power amplifier modules and systems, will showcase its latest innovation, a C-Band amplifier ...

Supporting the transition to 6G, the 5G GaN module enhances efficiency and facilitates easier installation in 5G-Advanced base stations.

Thermal resistance from junction to case (θJC) is a metric of how easily heat flows from the die junction to the exposed pad (note that while FET devices have channels rather than junctions, the term ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

Altum RF will showcase its featured products and technical expertise in booth #966 at the Moscone Center. Company leaders ...