The pinned-surface buried-channel P+PNPP+ double junction type photodiodes are very high-performance image sensors with no image lag and very high light sensitivity compared to conventional ones.

The findings are published in the August 2023 edition of Nature Electronics ‘Pinned photodiode for monolithic thin-film image sensors’ and initial results were presented at the 2023 edition of the ...

The G8338/G8339 InGaAs PIN photodiodes with transimpedance amplifiers are designed for fiber communication systems, including fibre channel, Gigabit Ethernet, and SDH.Both photodiodes have a range of ...

Imec, the Leuven, Belgium-based research and innovation hub in nano- and digital technologies, has announced the successful integration of a “pinned photodiode structure” in thin-film image sensors..

Device Offers Increased Photocurrent of 33 µA in 4.8 mm by 2.5 mm SMD Package With Industry-Low 0.48 mm ProfileMALVERN, Pa., Feb. 17, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE ...

Optimized for automotive applications, the AEC-Q101-qualified miniature TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors reside in 0805 surface-mount packages with a 1.25 mm x 2 mm ...

MALVERN, Pa., Aug. 14, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today released a new silicon PIN photodiode that brings a higher level of sensitivity in the visible / near ...

Already in the 1980’s, the pinned photodiode (PPD) structure was introduced for silicon-CMOS image sensors. This structure introduces an additional transistor gate and a special photodetector ...

MALVERN, Pa., Oct. 25, 2017 (GLOBE NEWSWIRE) -- To meet the need for reliable signal detection in wearable devices and medical and industrial applications, Vishay Intertechnology, Inc. (NYSE:VSH ...

Nikolas Papadopoulos, project leader, Thin-Film Pinned Photodiode at imec, commented, “The prototype 4T image sensor shows a remarkable low read-out noise of 6.1e-, compared to more than 100e- for the ...