The pinned-surface buried-channel P+PNPP+ double junction type photodiodes are very high-performance image sensors with no image lag and very high light sensitivity compared to conventional ones.

Imec, the Leuven, Belgium-based research and innovation hub in nano- and digital technologies, has announced the successful integration of a “pinned photodiode structure” in thin-film image sensors..

The findings are published in the August 2023 edition of Nature Electronics ‘Pinned photodiode for monolithic thin-film image sensors’ and initial results were presented at the 2023 edition of the ...

MALVERN, Pa., Aug. 14, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today released a new silicon PIN photodiode that brings a higher level of sensitivity in the visible / near ...

MALVERN, Pa., Feb. 01, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today broadened its optoelectronics portfolio with the introduction of a new high speed silicon PIN ...

Already in the 1980’s, the pinned photodiode (PPD) structure was introduced for silicon-CMOS image sensors. This structure introduces an additional transistor gate and a special photodetector ...

The LX3055 is a coplanar waveguide photodiode intended for high bandwidth single-mode fiber optic network applications. Fabricated as an InGaAS/InP PIN photodiode, it can serve in 1310 nm and 1550 ...

Vishay Intertechnology has broadened its optoelectronics portfolio with the introduction of a new high speed silicon PIN photodiode with enhanced sensitivity for visible light. Featuring a rectangular ...

Nikolas Papadopoulos, project leader, Thin-Film Pinned Photodiode at imec, commented, “The prototype 4T image sensor shows a remarkable low read-out noise of 6.1e-, compared to more than 100e- for the ...