A novel type of AlGaAs/GaAs heterojunction bipolar transistor (HBT) which uses a two-dimensional (2-D) hole gas base formed by planar doping using molecular-beam epitaxy (MBE) has been demonstrated.

A detailed two-dimensional numerical simulations study on the switch-on transient of advanced narrow-emitter bipolar transistors is presented. Particular emphasis is placed on the effect of the ...

Gov. Katie Hobbs (D-AZ) vetoed a bill on Tuesday that would have prohibited the Chinese government from owning real estate in Arizona. Arizona Senate Bill 1109 stipulated that the “People’s ...