Polysilicon is widely used as material for Emitter in vertical Bipolar Junction Transistors (BJT) to obtain high current gain (Beta). To optimize the electrical properties of polysilicon (Poly) ...

We present the characterization and analysis over the temperature range from 4 K to 300 K of both substrate bipolar PNP transistors and MOS transistors in standard and dynamic threshold MOS (DTMOS) ...

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