AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have ...

The future of digital computing and communications will involve both electronics—manipulating data with electricity—and ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

In this work, we proposed a high-precision sub-circuit model on drift region to capture electrical characteristics of a lateral double-diffused MOSFET (LDMOS). The novel sub-circuit model adequately ...

We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at process temperatures up to 950/spl deg/C. The substrates were 0.2-mm thick steel foil coated with 0.5-/spl mu ...

Although some researchers have established compact models of individual transistors and binary inverters, the development of compact models for ternary inverters remains limited and lacks experimental ...