ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

In this work, we proposed a high-precision sub-circuit model on drift region to capture electrical characteristics of a lateral double-diffused MOSFET (LDMOS). The novel sub-circuit model adequately ...

In this paper, a new coupling circuit is presented. This circuit uses a new method of subthreshold region biasing to decrease the value of coupling capacitor. In proposed circuit the Coupling ...