This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

Abstract: Two different Ka-band single-pole, double-throw (SPDT) switch circuits using monolithic GaAs epitaxial p-i-n diode technology are presented. The lowest insertion loss is 0.7 dB at 35 GHz, ...

This paper reports on the detection of sheet charge densities in silicon devices using an improved noninvasive optical probe based on the detection of free-carrier optical dispersion using a ...