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Shallow-angle (ca. 10°) negative bevel GaN p-n junction diodes were fabricated with various Mg acceptor concentrations in the p-layers. The suppression of electric field crowding and improvement of ...
High-Performance Heterojunction Pn Diodes Unveiled Chinese Academy of Sciences A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap ...
A traditional PN-junction diode can perform rectification, which isn’t the case with a Gunn diode since it conducts in both directions. But because its two terminals, both with negative dynamic ...
What you'll learn: Details about avalanche and flyback-type converters. MOSFETs and linear mode. In Part 1, we discussed the body diode, which is a PN junction diode that lies inside of the MOSFET ...
This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary ...
In the previous tutorial, we discussed the physical mechanism that determines the increasing trend of the reverse saturation current of a pn junction, as a function of temperature. In this article, we ...
Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading [1] reverse ...
Abstract GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates ...
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