Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The ...

In this article, we propose a high-frequency model taking into account the series resistance of pseudo-vertical gallium nitride (GaN)-based p-i-n diodes. This model relies on the specific contact ...

Engineered for next-gen AI servers, telecom systems, and solar inverters, the latest silicon carbide Schottky diodes offer ...

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Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mmMALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today ...

This paper presents the development of microstrip patch antenna with the capability to switch its polarization by utilizing PIN diodes. The proposed antenna is designed a a Rogers RT/duroid 5880 ...