Forming an optoelectronic device by monolithically integrating metal-oxide on the p-layer of regular p-n diode forming a three-terminal diode. As an emitter, it enables bias tee functionality and ...

We have designed and fabricated various NFAD devices, and they show reasonable dark count rate and afterpulse probability at 10% PDE. These NFAD devices have great promise to reduce charge flow ...