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IEEE6d
Low power CMOS NAND gate using DVS and mutithreshold CMOS technique
In digital and analog circuits, power consumption plays an important role in CMOS device. Due to scale down technology in VLSI circuits the threshold voltage of transistors reduced but increases in ...
IEEE8d
Dual-Gate Hybrid Ferroelectric Transistor Combines Photo-Switchable Logic and Memory for Encrypted Optical Communication - IEEE Xplore
In this study, we suggest a dual-gate hybrid ferroelectric transistor (DG-HFT) consisting of the vertically stacked tellurium/ α -In2Se3 junction and metal-insulator-semiconductor gate structure. This ...
C&EN23d
Transparent and Colorless Polyimides Containing Multiple Trifluoromethyl Groups as Gate Insulators for Flexible Organic Transistors with Superior Electrical Stability | ACS ...
A suitable insulating polymer material that is compatible with the fabrication process of organic transistors and has excellent electrical properties is critically required for the next-generation ...
C&EN28d
Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors - ACS Publications
Multicationic oxide semiconductors are receiving considerable interest in electronic and optoelectronic devices owing to their tunability of physical properties by the cation compositions. Here, we ...