News

Axcelis leverages ion implantation expertise to thrive in the semiconductor sector. Read more about ACLS stock's 65% upside ...
Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...
Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
KAIST has a roadmap projecting the evolution of high-bandwidth memory from HBM4 to HBM8 through 2038, detailing major gains ...
In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.
Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...