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Axcelis leverages ion implantation expertise to thrive in the semiconductor sector. Read more about ACLS stock's 65% upside ...
Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...
6d
Tech Xplore on MSNResearchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...
Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
1d
Tom's Hardware on MSNHBM development roadmap revealed: HBM8 with a 16,384-bit interface and embedded NAND in 2038KAIST has a roadmap projecting the evolution of high-bandwidth memory from HBM4 to HBM8 through 2038, detailing major gains ...
In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.
Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...
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