News
5d
Tech Xplore on MSNResearchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...
Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.
Baya Systems emerged from stealth mode less than a year ago. The company announced it had raised more than $36 million in a Series B round led by Maverick Silicon, backed by a strategic investment ...
Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.
Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...
Meat had taken a backseat to grain bowls and plant burgers, but now it's back. Just like fashion and ever-changing hemlines, food also comes in and out of favor.
N-bit adder implementations (Ripple Carry, Carry Lookahead, and Prefix) with synthesis using Cadence Genus. Area, power, and delay comparisons are provided for N = 4, 8, 16, 32, and 64.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results