Seoul National University College of Engineering announced that a research team has developed a new hardware security ...

This paper presents a SPICE compatible model of a dual-gate bilayer graphene field-effect transistor. The model describes the functionality of the transistor in all the regions of operation for both ...

Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction ...