In this paper, a novel superjunction MOSFET with ohm contact in the termination region and dual Schottky contacts in the cell region is proposed and experimentally demonstrated. The dual Schottky ...

It is highly desirable to monolithically integrate a high-performance freewheeling diode (FWD) in both Si and SiC power MOSFETs for power electronic applications. This is especially true for a SiC ...