Utilising Infineon's improved .XT die attach interconnection technology, the G2 devices achieve more than 15 percent lower thermal resistance and an 11 percent reduction in MOSFET temperature compared ...

The company is expanding its “GaN ecosystem” with a new family of 650-V GaN power FETs, which feature a silicon-compatible ...

It’s a simple oscillator circuit tailored to create a magnetic field around a water pipe to perform water conditioning.

A simple circuit can prevent hours of rework caused by momentary lapses of concentration when an incorrect power supply is ...

The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side cooling platform and are ...

Advances in LEDs and LED drivers deliver a range of improvements for automotive and horticultural LED lighting.

Continued innovation is helping to drive the development and growing adoption of wide bandgap materials, such as GaN.

SOP Advance(E) package enables lower loss and higher efficiency for industrial equipment, data centres, and base stations ...

The TLP579xH series meets the increasing demand for gate drivers that drive high-voltage power devices from the low-voltage control side through isolation, offering more accurate performance over a ...

Magnachip’s 80-V MXT MV MOSFET in a TOLT package for e-scooters and LEVs delivers improvements in thermal management and power efficiency.

Andreessen Horowitz leads a Series A investment in Diode Computers, which translates printed circuit board layouts into code.

The MOSbius chip [top left] contains all the transistors required for many analog systems. Mounted on a breadboard via a ...