Elaborating on a Flip ON Flop OFF circuit with a circuit that allows for a multi-state 10-position switch or a DAC.

Abstract: A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose ...

Abstract: Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, ...