News

Power Electronics World3d
Rohm gate driver optimised for HV GaN chips
New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...
IEEE4d
Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration - IEEE Xplore
Top-Gate CVD WSe 2 pFETs with Record-High I d ~594 μA/μm, G m ~244 μS/μm and WSe 2 /MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration ... Furthermore, full-output-swing inverters ...